2017 Volume 137 Issue 3 Pages 89-94
Amorphous indium-gallium-zinc oxide thin-film transistor based pH sensors utilizing a top-gate effect exhibit a high pH sensitivity beyond the Nernst theoretical limit. In this paper, we optimize the sequence for operating these sensors, and evaluate gate-to-source voltage (Vgs) response to small pH step variations. An intermittent operation obviously suppresses the long-term drift. As a result, the a-InGaZnO TFT pH sensor with the sensitivity of 450 mV/pH shows linear Vgs response to a pH step change of 0.1.
IEEJ Transactions on Industry Applications
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IEEJ Transactions on Power and Energy
IEEJ Transactions on Fundamentals and Materials
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