2019 Volume 139 Issue 7 Pages 217-218
Pretreatment using Ar or O2 plasma was investigated for wafer-scale room-temperature bonding using ultrathin Au films in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Bonding strength of samples obtained by Ar plasma treatment was strong enough to be broken from Si substrates, while that of samples obtained by O2 plasma treatment was only about 0.1 J/m2.
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