High-performance 801×512-element PtSi Schottky-barrier infrared image sensor

Abstract

A high-performance 801×512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a multiphase CSD with an on-chip multiphase CMOS clock generator. Flexible vertical scan is also possible using a newly developed transfer gate scanner. A large fill factor of 61% is obtained in spite of the small pixel size of 17×20μm². The differential temperature response and noise equivalent temperature difference with f/1.2 optics at 300K were 2.2×10⁴ electrons/K and 0.037K, respectively. The saturation signal level was 2.1×10⁶ electrons and the total power consumption of the device was less than 50mW.