IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Preparation and Characterization of Sol-Gel Derived PZT Thin Films for Micro Actuators
Zhan-jie WangRyutaro MaedaKikuchi Kaoru
Author information
Keywords: Pb(Zr0.52Ti0.48)O3
JOURNAL FREE ACCESS

1999 Volume 119 Issue 4 Pages 254-259

Details
Abstract
The Pb(Zr1-xTix)O3, (PZT) of thickness of 3μm was fabricated using Sol-Gel spinning-coating onto Pt/Ti/SiO2/Si substrates. The preferred orientation of the PZT films was observed using X-ray diffraction analysis (XRD) and the microstructure was investigated using scanning electron microscopy (SEM). The preferred orientations in the direction of the (100) plane were obtained using the treatment for pyrolysis at 573K and for crystallization at 823K. The present PZT films showed dielectric constants about 1200. Ferroelectricity of these films was established with the values of the remnant polarization of 12.5μC/cm2 and the coercive field of 29.0kV/cm.
Content from these authors
© The Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top