IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Application of Ferroelectric BST Thin Film Prepared by MOD for Uncooled Infrared Sensor of Dielectric Bolometer Mode
Hong ZhuMinoru NodaTomonori MukaigawaHuaping XuKazuhiko HashimotoMasanori Okuyama
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2000 Volume 120 Issue 12 Pages 554-558

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Abstract
Metal Organic Decomposition (MOD) has been applied to prepare Barium Strontium Titanate (Ba1-xSrxTiO3) ferroelectric thin film on micromachined Si wafer with an aim to fabricate dielectric bolometer(DB) type infrared image sensor. The detector pixel circuit is a capacitor-capacitor serially connected circuit, with one capacitor of BST film on Si membrane structure and the other on Si bulk structure. When exposed to IR radiation, the capacitance of the IR detecting capacitor on membrane structure changed as a result of the change in dielectric constant against temperature of BST ferroelectric film. Temperature Coefficient of Dielectric constant (TCD) of the MOD made BST (x=0.25, Ba/Sr=75/25) thin film is about 1%/K. Uniform and reproducible capacitance behavior in the BST ferroelectric thin film capacitor on micromachined Si substrate has been confirmed. Chopperless operation has been attained and IR responses of the fabricated sensor also have been obtained with Rv of 0.4kV/W and D* of 1×108 cmHz1/2/W, respectively.
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