EFFECT OF POTASSIUM ION ON ANISOTROPY OF TMAH

Abstract

We have clarified the effect of potassium ion addition to TMAH solution on orientation dependence of etching rate in silicon anisotropic etching and etched surface roughness. Hemispherical specimen of single crystal silicon and wagon wheel pattern were used for experiments. The etching rate in <011> direction decreases dramatically, etching rate in <111> direction increases and surface roughness decreased with adding potassium ion in TMAH.