International Journal of Automation Technology
Online ISSN : 1883-8022
Print ISSN : 1881-7629
ISSN-L : 1881-7629
Special Issue on Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society
Characteristics and Mechanism of Catalyst-Referred Etching Method: Application to 4H-SiC
Pho Van BuiYasuhisa SanoYoshitada MorikawaKazuto Yamauchi
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ジャーナル オープンアクセス

2018 年 12 巻 2 号 p. 154-159

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A novel abrasive-free planarization method named catalyst-referred etching (CARE) was developed. A polishing pad is coated with a catalytic material to promote chemical etching of the work substrate. During processing, the topmost areas of the work substrate, which are in contact with the catalyst surface, are selectively etched off. Atomically highly ordered surfaces are obtained for many types of work substrates. In this paper, the removal characteristics and mechanism of CARE for single crystalline 4H-SiC are reviewed.

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