International Journal of Automation Technology
Online ISSN : 1883-8022
Print ISSN : 1881-7629
ISSN-L : 1881-7629
Special Issue on Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society
Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices
Toshiro Doi
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ジャーナル オープンアクセス

2018 年 12 巻 2 号 p. 145-153

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SiC, GaN, and diamond are known as super-hard-to-process substrate for next-generation green devices. In this paper, we report on some breakthrough in developing highly efficient processing for such hard-to-process materials, for which we propose improvements in conventional processing, and innovative processing. As part of our project, we developed a “dilatancy pad®” that can efficiently produce high-quality surfaces as well as a high-rigidity, high-speed and high-pressure processing machine. We also designed and prototyped “plasma fusion CMP®,” which is an innovative processing technology fusing CMP (Chemical Mechanical Polishing) with P-CVM (Plasma Chemical Vaporization Machining) to machine super-hard diamond substrates that are considered indispensable for future devices. Before the advent of “singularities” by 2045, super-hard-to-process substrates and ultra-precision polishing technology will become more and more essential.

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