International Journal of Automation Technology
Online ISSN : 1883-8022
Print ISSN : 1881-7629
ISSN-L : 1881-7629
Special Issue on Innovative SiC/GaN/Diamond Single-Crystal Substrates and Planarization Processing Technologies for the Next Generation ICT Society
Potential and Challenges of Diamond Wafer Toward Power Electronics
Shinichi Shikata
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JOURNAL OPEN ACCESS

2018 Volume 12 Issue 2 Pages 175-178

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Abstract

To achieve a 50% worldwide reduction of CO2 by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

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