Basic Properties of Fixed Abrasive Polishing by Alumina Abrasive Grain for Si Wafer - Effects of Actual Contact Area and Grain Size –

抄録

To investigate basic polishing properties of fixed abrasive polishing using alumina abrasive grain for Si wafer, we used a pyramidal structured polishing pad having alumina abrasives and aqueous KOH solution as the polishing fluid. We clarified that the optimum KOH solution concentration required to get a smooth surface 5 wt% and finished surface roughness of 80nmRz. The cutting edge was hardly worn and polishing performance was maintained without dressing.