抄録
Recent numerical studies by the authors concerning bulk single crystal growth under microgravity fields were reviewed. For the InGaSb alloy crystal growth by temperature gradient method, it was found that the growth rate was not affected by gravity level although the dissolution of GaSb seed crystal before growth process was enhanced by solutal natural convection under normal gravity field. For the Si/Ge alloy crystal growth by floating zone method, transport structure including wave number was changed by coexistence of solutal and thermal Marangoni convections. For the hydrothermal wave in a shallow annular melt, the combination of crucible rotation and magnetic field was efficient for suppression of unsteady transport phenomena even though weak external forces.
