NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan)
Online ISSN : 1880-4675
Print ISSN : 1344-4425
ISSN-L : 1344-4425
Invited Review
Materials and Device Properties of High-mobility Organic Transistors
Jun TAKEYA
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2014 Volume 53 Issue 6 Pages 492-499

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Abstract
Organic transistors are MOS-type field-effect transistors in which an organic semiconductor is used as the active layer. Some organic semiconducting compounds are highly soluble in certain solvents, so that it becomes possible to form a semiconductor thin film by solution coating. Thus, there are considerable expectations for innovative industrial applications, in which low-cost, large-area devices can be produced on plastic films using printing technology. In this report, I introduce the physics of carrier transport in an intermolecularly delocalized electronic state, which is a key factor for realizing high-performance organic transistors. I also describe prospects for the industrial application of printable single-crystal organic semiconductors with mobilities exceeding 10cm2/Vs.
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© 2014 by The Imaging Society of Japan
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