Performance Improvement of Benzothienobenzothiophene-Based Organic Field-Effect Transistors Processed from Halogen-Free Solvents

Abstract

The performance of top-gate organic field-effect transistors (OFETs) based on 2,7-dioctyl [1] benzothieno [3,2-b] [1] benzothiophene (C₈-BTBT) using halogen-free organic solvents for forming semiconductor layers has been investigated to reduce the impacts on environment in the solution process. Top-gate FETs where C₈-BTBT thin films processed by spin coating from non-halogen solvents onto cross-linked poly (4-vinylphenol) layers exhibit high field-effect mobility of 4cm²V^-1s^-1 and good subthreshold characteristics, which are comparable to those of devices processed from a halogen solvent of chlorobenzene.