2020 Volume 59 Issue 1 Pages 111-117
In recent years, the development of electronic devices using printing processes has attracted much attention. In particular, inkjet printing is one of the most useful methods for device fabrication because it has many advantages of digital on demand, scalable, and non-contact. However, in inkjet printing, there is a problem that it is difficult to form fine patterns of 10μm or less due to the wetting and spreading of landing droplets. In this report, to solve this problem, we report a fine electrode patterning method that combines the wettability pattern on the substrate surface and inkjet printing. By using this method, we have successfully fabricated the fine electrodes of 10μm or less with small variation. In the short channel organic thin film transistor (TFT) fabricated using this method, a good field effect mobility of 0.23cm2/Vs was obtained.
