2020 Volume 59 Issue 1 Pages 118-125
Organic thin-film transistor (OTFT) devices have attributes that are difficult to achieve with conventional silicon (Si) based thin-film transistor technology, such as thinness, flexibility, and lightweight. Moreover, OTFT devices can be produced printing methods using inks created using silver nanoparticles, organic semiconductors, or dielectric materials, and their characteristics are improving year by year. Integrated circuits using only p-type semiconductors have been well studied, since p-type semiconductors generally have higher performance vs. n-type semiconductors, such as enhanced mobility and atmospheric stability. However, the performance of n-type semiconductors has recently improved, and there has been an increasing number of reports on research activity relating to complementary integrated circuits employing both p-type and n-type semiconductors. In this study, we have developed a fabrication process for complementary integrated circuits using printing methods, realized using a p-type semiconductor layers that do not require electrode surface modification.
