抄録
We have grown thin films of silicon from fluorides under controlling atomic hydrogen concentration in the gas phase. Both amorphous and crystalline films has been successfully obtained. Highly [110] axis oriented polycrystalline silicon films have been grown at high growth rate of about 20 A/s on glass substrates at 300°C. Epitaxially grown crystalline silicon has also been obtained on (100) Si and (110) Si substrates at the same temperature. To obtain high quality crystallized films, it is found to be important to control the chemical reaction both in the gas phase and in the growing surface.
