The Neugebauer equations are well known to figure out the color reproduction value of printed materials. These equations are supposed to be theoretically applied to the color reproduction of the RICOH digital color printer output. However, since these equations were very complicated to solve, we used the approximate solutions for color correction process instead.
We handled reflectances as input and fractional dot areas as output in the color correction process. In this case, the approximate value of cyan and magenta was very accurate and close to the targeted value, however, the value of yellow was not acceptable. We resolved the Neugebauer equations concerning yellow by using approximate value of cyan and magenta. As a result, the value of yellow was acceptable as well as cyan and magenta.
In case of handling original densities as input and handling either toner densities or fractional dot areas as output, the color correction process was relatively successful by using the approximate value of cyan, magenta and yellow. Therefore, it was shown that the color correction process like conventional one could be applied even to the digital color printer.

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A model is proposed which describes the toner charging in a mono-component non-magnetic developement system. No magnetic material is necessary for this system. By means of an elastic metal blade which is pressed against the roughened surface of the developing roller, a thin layer of the non-magnetic toner is formed on the roller. Toner particles are charged triboelectrically by friction with the blade and the roller. The latent image is developed with the non-contact developing technique.
The following conclusions are derived from the analysis of the relationship between the potential distribution in the toner layer and the current flowing into the blade: (1) 30% of the toner charge is generated by friction with the blade, (2) Toner particles which have a saturated charge get once a surplus charge Δq by contact with the blade, (3) The surplus charge Δq flows through the toner layer and is discharged to the roller, (4) The metal blade controls the toner charging and the toner charge is maintained at a constant value. The numerical calculations agree well with the experimental results.
An application to a two-color laser beam printer is studied. The undesirable mixing of the defferent color toners does not occur on the photoconductive drum and in the developing apparatus, because the toner layer does not contact with the drum surface.

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A UV-fixable diazo type thermal recording material was developed. A diazonium salt was
encapsulated in a polymer microcapsule, the wall of which was formed around the core material
by polymerization after emulsifying the core material. The thermal recording material containing
the encapsulated diazonium salt, a coupling agent, an organic base and a specific thermo-sensitizer
has high thermo-sensitivity compatible with G3 facsimile equipment, and excellent shelf life. The
polymer microcapsule has a good isolating function at ordinary temperatures and good material
permeability at high temperatures. The specific thermo-sensitizer, when melted, has a strong
affinity with the capsule wall, and promotes the heat response of the core material. The image,
after UV-fixing, has good resistance to various chemicals, and no forming of heat-induced images.

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Our UV-fixable thermal recording material principally consists of diazonium salts contained in microcapsules, coupling agents, oganic bases and thermo-sensitizers.
It was found that color development characteristics of this recording material depends not only on the eutectic point of the composition as in general thermal recording material, but also on the temperature dependence of the phsical properties of the wall of the microcapsule and the interaction between the wall of the microcapsule and the composition. That is, the wall of the microcapsule works as a valve that opens at the glass transition temperature.
The thermo-sensitizer is the ingredient that not only reduces the eutectic point of the coupling agent and the organic base, but also reduces the glass transition temperature of the wall of the microcapsule.

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Equation which describes charging characteristics of toner particle layer contacting on plain surface was proposed based on the assumption that the electric field at the contact points has definite saturation value.
It was proved to be the same with the equation which was obtained by Kondo for two component developers when the common parameters such as the number of toner particles per unit carrier surface area were used instead of toner concentration.
It was also shown that the charge to mass ratio obtained for commercial developers at various toner densities generally follow to this equation.
The effect of applied external electric field on the toner layer contacting on conductive surface was also taken into account.

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Amorphous Si_1-xC_x: H films for passivation of a-Si photoreceptor have been prepared by reactive RF sputtering method using Si target in a gas mixture of Ar+60% H₂ and ethylene or methane.
The properties of films such as the resistivity, the optical bandgap, the spin density and the content of H atoms bonded to Si and C atoms are not different between the films prepared by these carbon sources.
The high resistivity (∼10¹⁵ Ω·cm) and the wide optical bandgap (∼2.6 eV) have been obtained at the carbon content X=0.4∼0.45. The content of H atoms bonded to Si atoms decreases rapidly with X in the range of 0.2, on the other hand the content of H atoms bonded to the C atoms increases monotonously with X. By XPS analysis, the ratios of O_1s/Si_2p at the surface of a-Si_1-× C_x: H films decrease with X. The difference of contact angle of water drop before and after oxidation test (60°C×80% RH×18 h) is relatively small in the films with the carbon content in the range of X>0.3.

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We have grown thin films of silicon from fluorides under controlling atomic hydrogen concentration in the gas phase. Both amorphous and crystalline films has been successfully obtained. Highly [110] axis oriented polycrystalline silicon films have been grown at high growth rate of about 20 A/s on glass substrates at 300°C. Epitaxially grown crystalline silicon has also been obtained on (100) Si and (110) Si substrates at the same temperature. To obtain high quality crystallized films, it is found to be important to control the chemical reaction both in the gas phase and in the growing surface.

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