A Novel Method for the Determination of Localized-state Distributions in Amorphous Semiconductors from Transient Photocurrent using a Laplace Transform Technique

Abstract

A novel method for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transform technique has been proposed. Unlike conventional methods, localized-state distributions can be determined from the whole time range of the transient photoconductivity encompassing a recombination lifetime in terms of the present method. The applicability of the present method is demonstrated in various models with different distributions of the density of states by means of numerical calculation.