12-2 固体撮像素子用HARP薄膜の光電変換効率向上の検討

抄録

In order to increase the sensitivity of the thin 0.4-μm thick HARP(High-gain Avalanche Rushing amorphous Photoconductor) layer for solid-state imagers, an improvement of the quantum efficiency was studied. New Tellurium (Te)-doped HARP layers were designed using the results of simulations, and it was found that the quantum efficiency could be more than doubled over conventional levels for green light.