抄録
Nanometer-sized Si dot multilayers have been prepared by repeating low-pressure chemical vapor deposition for dot formation and thermal oxidation for dot isolation. The multilayer with the dot size 3-5nm shows photoconductivity at the photon energy above 2.5eV, Which corresponds to the optical absorption of the Si dot. This result indicated that the nanometer-sized Si dot multilayers are promising as photoconductors, which work at various wavekengths because the opitical bandgap can be controlled by the dot size.
