PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2000
Session ID : 25-7
Conference information

Name : 2000 ITE Annual Convention

Location : [in Japanese]

Date : August 23, 2000 - August 25, 2000

25-7 Preparation of Ga_2O_3:Eu thin film for EL device by electron beam evaporation
N. Narure, H. Kominami, Y. Nakanishi, Y. Hatanaka
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Abstract
Ga_2O_3 thin films were deposited on quartz substrates using Eu-doped GaN by Electron Beam evaporation, then they were annealed at several temperatures for 1 hour in Ar+O_2 flows. It was found that the as-deposited film consists of almost fraction of Gallium metal, and the Ga_2O_3 film is formed by the annealing.
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© 2000 The Institute of Image Information and Television Engineers
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