24-6 A Study on a Signal Readout Circuit with High Signal to Noise Ratio for a CMOS Image Sensor Overland with a HARP Photoconversion Layer

Abstract

We developed a CMOS readout circuit with large S/N for a solid-state HARP imaging devices. A CMOS readout circuit is composed of a charge transfer type voltage multiplier and CDS circuit. We designed the charge transfer circuit to achieve a voltage gain of about 4 and realize large S/N. A prototype chip was fabricated with 1.5μm, 2metal, 2poly CMOS technology and the characteristics of the circuit were evaluated.