抄録
We have
proposed
new storage devices
utilizing
current
-
driven domain wall motion
along
magnetic
nanowire
with
ultra
-
high
data transfer rate.
In order to reduce the driving current of magnetic domains
, w
e
fabricated [Co/Pd
] nanowire with
Ru inter
layer
and
inves
tigated
the behavior of current
-
driven domains motion according to the change of magnetic property.