負帰還リセットによる蓄積容量変調型CMOSイメージセンサ

抄録

We have investigated a method for adapting the luminosity of an image sensor based on CMOS technology. The sensor effectively takes advantage of a negative feedback method to turn any mid-voltage into a PD-capacitance while a pixel circuit is in motion. We also used quasi-holding for each pixel value by resetting the pixel-output voltage to the PD-capacitance. We adapted the luminosity by selecting each pixel indvidually then setting mid-voltage or the quasi-holding. The output data is characteristic of a polygonal line that changes from high to low sensitivity as the luminosity gets stronger and can be output without being modified. Using this method, the sensor was created from pixel circuits that consist of three nMOSFETs and a PD. We greatly reduced the flags and frame buffer in the external memories.