2009 年 63 巻 12 号 p. 1877-1880
A floating millivolt reference circuit to generate a PTAT current was developed by using MOSFETs operated in the subthreshold region. The circuit generates a floating voltage of 10 mV. The variations in the reference are ±2.7 % in a temperature range from -20 to 100°C. The total power consumption of the circuit was 1.3 μW.