ホール蓄積型CMOSイメージセンサの開発

藤田 博明; Eric Stevens; 小森 寛文; Hung Doan; Jeffery Kyan; Christopher Parks; Gang Shi; Cristian Tivarus; Jian Wu

doi:10.3169/itej.64.343

特集論文

ホール蓄積型CMOSイメージセンサの開発

藤田博明, Eric Stevens ^†, 小森寛文, Hung Doan ^†, Jeffery Kyan ^†, Christopher Parks ^†, Gang Shi ^†, Cristian Tivarus ^†, Jian Wu ^†

著者情報

藤田博明
Image Sensor Solutions Eastman Kodak Company
Eric Stevens ^†
Image Sensor Solutions Eastman Kodak Company
小森寛文
Image Sensor Solutions Eastman Kodak Company
Hung Doan ^†
Image Sensor Solutions Eastman Kodak Company
Jeffery Kyan ^†
Image Sensor Solutions Eastman Kodak Company
Christopher Parks ^†
Image Sensor Solutions Eastman Kodak Company
Gang Shi ^†
MEMC Electronic Materials Inc
Cristian Tivarus ^†
Image Sensor Solutions Eastman Kodak Company
Jian Wu ^†
Image Sensor Solutions Eastman Kodak Company
著者の貢献

†Eric Stevens, Hung Doan, Jeffery Kyan, Christopher Parks, Gang Shi, Cristian Tivarus, Jian Wuは本研究に等しく貢献した。

キーワード: CMOSイメージセンサ, ホール, クロストーク, 暗電流, ノイズ

ジャーナルフリー

2010 年 64 巻 3 号 p. 343-346

DOI https://doi.org/10.3169/itej.64.343

詳細

抄録

A new CMOS image sensor using a hole based detector has been developed. The measurement shows that crosstalk is reduced to one-third and dark current is reduced to a thirtieth that of a standard nMOS device. Red-into-green pixel crosstalk is 7% at 650 nm for a 4.3-μm pixel and dark current as low as 6 pA/cm² at 60°C. Charge capacities of 60, 11 and 4kh+ have been measured for 4.3-, 1.75- and 1.4-μm pixels, respectively.

責任著者(Corresponding author)

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