抄録
This paper introduces a new device architecture suitable for obtaining a large format, high resolution, and high performance image sensor. Each pixel in the sensor comprises a buried photodiode and a junction field effect transistor, for signal charge generation and amplificaion, respectively. A 1.6 M pixel image sensor was constructed with source follower amplifiers and correlated double sampling circuits for signal readout. The image sensor exhibited high-sensitivity, low-noise, and high-protection capabilities for blooming and smear. The fundamental characteristics-sensitivity of 2 V/lx·s, dynamic range of 75 dB, noise equivalent exposure of 9.2×10-5lx·s, and a dark FPN level of -66 dB were achieved.
