EFFECT OF THE COMPENSATION LAYER ON THE PERFORMANCE OF A-SI : H TFTS

Shaoqiang Zhang; Zhongyang Xu; Xuecheng Zou; Changan Wang; Xuemei Zhou; Bofang Zhao; Yongbin Dai; Xinheng Wan; Hui Ding

doi:10.11485/itetr.21.10.0_101

21.10

DOI https://doi.org/10.11485/itetr.21.10.0_101

会議情報

EFFECT OF THE COMPENSATION LAYER ON THE PERFORMANCE OF A-SI : H TFTS

Shaoqiang Zhang, Zhongyang Xu, Xuecheng Zou, Changan Wang, Xuemei Zhou, Bofang Zhao, Yongbin Dai, Xinheng Wan, Hui Ding

著者情報

Shaoqiang Zhang
Department of Solid State Electronics, Huazhong University of Science and Technology
Zhongyang Xu
Department of Solid State Electronics, Huazhong University of Science and Technology
Xuecheng Zou
Department of Solid State Electronics, Huazhong University of Science and Technology
Changan Wang
Department of Solid State Electronics, Huazhong University of Science and Technology
Xuemei Zhou
Department of Solid State Electronics, Huazhong University of Science and Technology
Bofang Zhao
Department of Solid State Electronics, Huazhong University of Science and Technology
Yongbin Dai
Department of Solid State Electronics, Huazhong University of Science and Technology
Xinheng Wan
Department of Solid State Electronics, Huazhong University of Science and Technology
Hui Ding
Department of Solid State Electronics, Huazhong University of Science and Technology

キーワード: Amorphous silicon, Thin-film transistor, Liquid crystal display, Passivation layer, Hydrogen plasma

会議録・要旨集フリー

p. 101-105

詳細

抄録

A compensation layer was inserted in between active layer a-Si : H and passivation layer a-SiNx of a-Si : H TFTs in order to improve the quality of the interface. The dependence of the performances of the a-Si : H TFTs with the rf power of the hydrogen plasma treatment were experimentally investigated. The characteristics of the a-Si : H TFTs is improved by using an optimum rf power and introducing a special buffer layer.

責任著者(Corresponding author)

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