p. 113-117
We optimized the growth conditions of ZnS : Mn phosphor film and Ta_2O_5,SiO_2 dielectric films respectively. We also fabricated a 10-in. diagonal ZnS : Mn thin-film electroluminescent (TFEL) panel using newly developed a series of sputtering and electron beam apparatus which could deposit these films sequentially. The average luminance of this 10-in. diagonal TFEL panel was 1900 cd/m^2,at 40 V higher than threshold voltage with 1K Hz sinusoidal wave excited.