Abstract
We propose the new poly-Si TFT structure which reduces the leakage current effectively employing highly resistive a-Si region in the channel. This new device has partially crystallized active layer, where both edges of channel region adjacent to source and drain are not crystallized and remain a-Si. In the fabrication of the proposed device, there are not additional photo masking steps and misalign problem. Another advantage of the proposed device is increase of aperture ratio adpting the transparent ITO gate
