抄録
We have fabricated and characterized silicon field emitter arrays by Chemical-Mechanical-Polishing (CMP) process for a clearly cutted gate electrode that was exactly aligned to the emitter. A very high etching selectivity (> 200 : 1) between the gate electrode and the dielectric was used for preveating the tip from etching off during the CMP. Furthermore, focusing electrodes were also fabricated by the CMP process.
