Abstract
It has been reported that hot electrons that excite luminescent centers can be injected into an emitting layer from p-Si as a result of band bending in Si at the interface between SiO_2 and p-Si. Therefore it is expected that driving voltage for an electroluminescent (EL) device is lower than that of a conventional EL device. In this experiment, an integrated EL device was fabricated on p-MOSFET and luminescent properties of this device was measured in view of realization of high-resolution EL display. When p-MOSFET was operated, a variation of the luminance about 15 cd/m2 was obtained. However it is necessary to improve the variation of the luminance to achieve a complete ON/OFF control of the luminance.
