Abstract
Mn-doped ZnS thin films were grown by low-pressure chemical vapor deposition using metal zinc vapor. H_2S and TCM (CH_3C_5H_4Mn (CO_3)) at the deposition temperature from 500 to 700 [℃]. The dopant concentration in films was adjusted by controlling the temperature of TCM. The crystal structure, composition, surface morphology and the electroluminescent characteristics were studied. There were strongly dependent on the deposition temperature. The crystallinity and the electroluminescent brightness were poor only at about 600 [℃], and at the other deposition temperature regions they were good. When the deposition temperature was 650 [℃] and TCM temperature was 10 [℃], the maximum brightness of 1110 [cd/m2] was obtained.
