Abstract
It has been tried to make the ZnS : Ag, Cl phosphors used in usual CRT conductive, i.e. the formation of In_2O_3 conductive layer using In[OCH(CH_3)_2]_3 by the sol-gel method. It was found that the very thin and uniform coating layer was formed on the phosphor surface. And it was thought that the this coating layer was crystallized due to the In_2O_3 powder prepared by the same method was showed the some peaks by XRD measurement. Cathodoluminescent properties were become better according to the increasing of the amount of the In[OCH(CH_3)_2]_3 at the low voltage region. Furthermore, it was showed that the luminance of the coated phosphor was showed higher than that of the uncoated phosphor after 15 hours irradiation by the electron beam. It indicates that the sol-gel coating layer is protected the phosphor surface by the electron beam irradiation.
