Abstract
For the purpose of preparing CaGa_2S_4 : Ce phosphor films for blue-emitting electroluminescent devices at a low substrate and annealing temperature, we have tried to accomplish it by multi-source deposition technique using Ca, Ga_2S_3 and CeCl_3 evaporation source. The structural and luminescent properties of the films depended on substrate temperature and Ga_2S_3/Ca flux ratio. The film including CaGa_2S_4 : Ce phase could be prepared by depositing at a substrate temperature of 550℃. However, the compositional fraction of Ga and S were very small compared with the stoichiometric composition. On the other hand, the film deposited at 450℃ and annealed at 700℃ or 800℃ for 3 hours in H_2S, consisted of CaGa_2S_4 phase and showed bright blue PL with peaks at around 460 and 510 nm.
