Abstract
A dc magnetron sputtering appratus assited by an inductively coupled rf plasma was designed and build. In this apparatus, thin film deposition was possible even at low dc voltage applied to a taget. Deposition rate increases with increasing ICP rf power. Perpendicular magnetic annisotropy in Co-Cr films seposited with this sputtering appratus decreased with increasing ICP rf power. It was surmized that high-rate deposition of Co-Cr films with large perpendicular magnetic anisotropy is feasible both by use of ICP and application of positive vias voltage to substrate.
