Abstract
A new Si field emitter tip with metal-oxide-semiconductor field-effect-transistor (MOSFET) structure was fabricated and demonstrated. In the present device, a well-sharpened Si tip was made junst on the drain of the MOSFET and two gates were made of poly-Si layer between the drain and the source. Among the gates, the one having an aperture surrounding the tip was mainly used as an extraction electrode and the other was used as an FET gate. By employing the poly-Si gates, the fabrication process was optimized especially in the activation temperature after ion implantation doping and consequently, the MOSFET characteristics was much improved. The fabrication process and emission characteristics are described in detail.
