Abstract
A light-shield amorphous silicon(a-Si:H)thin film transistor(TFT)with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n^+ a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7cm^2/Vsec, subthreshold swing of 0.55V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of-10V and drain voltage of 10V.
