CCDイメージセンサにおけるフォトダイオード特性向上技術 : 感度改善、VODシャッター電圧低減

村上 一朗; 中野 隆; 畑野 啓介; 中柴 康隆; 冨留宮 正之; 永田 豪; 内海 浩昭; 打矢 聡; 新井 浩一; 武藤 信彦; 河野 明啓; 寺西 信一; 穂苅 泰明

doi:10.11485/itetr.23.30.0_1

23.30

Session ID : IPU'99-13/CE'99-1

DOI https://doi.org/10.11485/itetr.23.30.0_1

Conference information

New Technologies of Photo-Sensitivity Improvement and VOD Shutter-Voltage Reduction for CCD Image Sensors

I. Murakami, T. Nakano, K. Hatano, Y. Nakashiba, M. Furumiya, T. Nagata, H. Utsumi, S. Uchiya, K. Arai, N. Mutoh, A. Kohno, N. Teranishi, Y. Hokari

Author information

I. Murakami
ULSI Device Development Laboratories, NEC Corporation
T. Nakano
Silicon Systems Research Laboratories, NEC Corporation
K. Hatano
ULSI Device Development Laboratories, NEC Corporation
Y. Nakashiba
ULSI Device Development Laboratories, NEC Corporation
M. Furumiya
ULSI Device Development Laboratories, NEC Corporation
T. Nagata
ULSI Device Development Laboratories, NEC Corporation
H. Utsumi
Silicon Systems Research Laboratories, NEC Corporation
S. Uchiya
System Micro Division, NEC Corporation
K. Arai
Silicon Systems Research Laboratories, NEC Corporation
N. Mutoh
Silicon Systems Research Laboratories, NEC Corporation
A. Kohno
System Micro Division, NEC Corporation
N. Teranishi
Silicon Systems Research Laboratories, NEC Corporation
Y. Hokari
ULSI Device Development Laboratories, NEC Corporation

CONFERENCE PROCEEDINGS FREE ACCESS

Details

Abstract

New technologies to improve a photo-sensitivity and to reduce a shutter-voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. A 40% photo-sensitivity improvement was obtained by forming an anti-reflection film over the photodiode, in addition to reducing the thickness of player formed at the photodiode surface. A VOD shutter-voltage reduction from 31 V to 18 V was successfully obtained by using an epitaxially-grown substrate with double impurity concentration layers.

Corresponding author

Register with J-STAGE for free!