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Displaying 1-9 of 9 articles from this issue
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Article type: Cover
Pages Cover1-
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (15K) -
Article type: Index
Pages Toc1-
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (46K) -
I. Murakami, T. Nakano, K. Hatano, Y. Nakashiba, M. Furumiya, T. Nagat ...Article type: Article
Session ID: IPU'99-13/CE'99-1
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSNew technologies to improve a photo-sensitivity and to reduce a shutter-voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. A 40% photo-sensitivity improvement was obtained by forming an anti-reflection film over the photodiode, in addition to reducing the thickness of player formed at the photodiode surface. A VOD shutter-voltage reduction from 31 V to 18 V was successfully obtained by using an epitaxially-grown substrate with double impurity concentration layers.View full abstractDownload PDF (712K) -
Hiroaki Sugiura, Tetsuya Kuno, Narihiro Matoba, Hiroaki IkedaArticle type: Article
Session ID: IPU'99-14/CE'99-2
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSColour signal outputs from digital cameras can be calculated from spectral distribution of an illumination, spectral reflectance of a shooting object, and spectral responsivity of a camera. The methods of measuring spectral distribution of illuminations and spectral reflectance of objects have been established unambiguously, and their characteristics are available from various databases. However, no accurate methods have been clearly defined regarding the measurement of the spectral responsivity characteristics of digital cameras. For objective assessment of the performance of digital cameras which capture colour images and output corresponding colour information in red - green - blue digital image data, proposed methods incorporate measurements of characteristics for spectral responsivity and related items. In this paper, by adopting compensation of tone characteristics for each pixel, the authors developed yet another new method of measurements to overcome some possible defects in the previously proposed methods. The paper describes an arrangement of equipment, definition of test chart and raw data handling together with some worked examples. The newly developed method has made it possible to measure the spectral responsivity characteristics of digital cameras accurately.View full abstractDownload PDF (686K) -
Hiroaki Ishiwata, Hiroki Miura, Yoshinori Iida, Yoshiyuki MatsunagaArticle type: Article
Session ID: IPU'99-15/CE'99-3
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA CMOS active-pixel sensor with two capacitor cells and on-chip differential circuits is developed using a 0.6 μ m CMOS. The process performs a 3D object extraction at 100frames/s with light-emitting diodes as the active illumination source.View full abstractDownload PDF (500K) -
K. Hatano, M. Furumiya, Y. Nakashiba, I. Murakami, T. Kawasaki, T. Yam ...Article type: Article
Session ID: IPU'99-16/CE'99-4
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA 1/2-inch 1.3M-pixel progressive scan interline-transfer charge-coupled device (IT-CCD) image sensor has been developed for low power and high sensitivity digital cameras. A new technology of the single layer poly-Si electrode with 0.25 μm gap was used to reduce fabrication process steps and the power consumption. An original pixel layout and a self-aligned photodiode structure make it possible to achieve a progressive scan pixel with well-controlled photodiode readout characteristics. The device achieved a low driving voltage (2.1 V) on a horizontal CCD at a frequency of 24.5 MHz. An output 3-stage source follower amplifier with new multi-oxide transistors, whose gate insulator thickness is thinner than that of a CCD register, enables to attain 17% higher gain than that of the conventional amplifier. The total fabrication process steps were successfully reduced and power consumption was reduced to 70% compared with the conventional 3-layer poly-Si electrodes device.View full abstractDownload PDF (776K) -
M. Nanba, T. Yamagishi, S. Okazaki, K. Tanioka, K. Takayama, M. Tanaka ...Article type: Article
Session ID: IPU'99-17/CE'99-5
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA new type of image sensor featuring a unique structure is studied with the aim of achieving both super-high sensitivity and ultrahigh definition. This image sensor combines a field emitter array (FEA) and a high-gain avalanche rushing amorphous photoconductor (HARP) target. We investigated the conditions for improving resolution in a vacuum chamber by inserting a mesh electrode between the FEA and the target. The results indicate that the resolution can be improved by making the accelerating electric field between the FEA gate and the mesh stronger, and by placing the mesh closer to the FEA. We also proposed a new parallel readout operation that is suitable for an ultrahigh-definition image sensor. By dividing the target into multiple segments and reading out signals from each segment simultaneously, the operating frequency can decrease. In our first attempt, a good 60 x 60 pixel image was synthesized from two 30 x 60 pixel segments.View full abstractDownload PDF (686K) -
Hiroki Ui, Yutaka Arima, Fumihide Murao, Shinji Komori, Kazuo KyumaArticle type: Article
Session ID: IPU'99-18/CE'99-6
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA human retina like, wide operating-range CMOS image sensor with pixels that shift their intensity-response curves according to the intensity of light has been constructed. The chip realizes an operating range 29dB wider than that of conventional CMOS image sensor. The chip integrates 128×128 pixels whose size is 24×24μm^2 with 0.8 μm single poly-Si and double metal CMOS technology. The chip size is 6.0×4.6mm^2.View full abstractDownload PDF (699K) -
Article type: Appendix
Pages App1-
Published: March 26, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (76K)
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