CMOS Image Sensor Overlaid with a HARP Photoconversion Layer

Abstract

We have fabricated a 128×128 CMOS image sensor overlaid with a HARP film making use of high voltage endurance MOS transistors and indium micro-bump process. We obtained the characteristics of the HARP film and CMOS readout circuit with this device and confirm a signal multiplication in an avalanche mode. The result demonstrates that this sensor is expected to have high sensitivity. It is also important to make noise lower and achieve high signal-to-noise ratio.