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Displaying 1-10 of 10 articles from this issue
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Article type: Cover
Pages Cover1-
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (15K) -
Article type: Index
Pages Toc1-
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (47K) -
Takayuki Kimura, Noboru Takatsuka, Takanori Arano, Hiromitsu ShirakiArticle type: Article
Session ID: IPU'99-45
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSResolution progress of image sensor by digital signal processing was simulated on computer. By this method, high-resolution images that have high spacial frequency beyond the Nyquist frequency can be obtained. Simulated imaging device is an area image sensor. After the simulation, reproduced images that have frequency components twice higher than Nyquist frequency are successfully obtained. Using this method, it is possible to enhance the resolution of CCD image sensor twice as high as its inherent resolution.View full abstractDownload PDF (643K) -
Hideki MutohArticle type: Article
Session ID: IPU'99-46
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA wave optical simulator TOCCATA-Wave 3D was newly developed in order to analyze optical characteristics of 3-D structures including diffraction and interference. Optical characteristics of inner-layer lens structures are studied by this simulator. The inner-layer lens structure gives better concentrated focal region and smaller lateral shift of the focal region under the oblique incident light, comparing with the single lens structure. It is found that the improvement of the light-gathering power by the inner-layer lens structure is remarkable in the case of the small F-number and large top lens height.View full abstractDownload PDF (509K) -
Y. Ishiguro, T. Watabe, H. Ohtake, K. Yamano, M. Yamauchi, T. Tajima, ...Article type: Article
Session ID: IPU'99-47
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have fabricated a 128×128 CMOS image sensor overlaid with a HARP film making use of high voltage endurance MOS transistors and indium micro-bump process. We obtained the characteristics of the HARP film and CMOS readout circuit with this device and confirm a signal multiplication in an avalanche mode. The result demonstrates that this sensor is expected to have high sensitivity. It is also important to make noise lower and achieve high signal-to-noise ratio.View full abstractDownload PDF (787K) -
Kazuhide SUGIURA, MyoengSoo OH, Kiyoharu AIZAWAArticle type: Article
Session ID: IPU'99-48
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSIn this paper, we propose a new focal plane A/D conversion for digital smart sensors. The proposed A/D converter is pixel-parallel architecture. The circuit for each pixel has a current mode comparator, multiple current mirrors and two shift registers. The design and the preliminary simulation are shown.View full abstractDownload PDF (484K) -
Ikuko I., H. Ihara, H. Yamashita, T. Yamaguchi, H. Nozaki, R. MiyagawaArticle type: Article
Session ID: IPU'99-49
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe have developed CMOS image sensor which has high sensitive comparable to CCD imagers by realizing a very low leakage photo-diode. A low dark current of 0.1 nA/cm2 in 5.6 μm□ pixel has been achieves by a pinned photodiode structure and a sensor-specified process for a 1/4-inch 330 K pixel CMOS image sensor. The noise floor of the imager has also been reduced by an appropriate circuit design in the readout path.View full abstractDownload PDF (740K) -
Yuzo Ohtsuru, Yoshihiro Okada, Shin'ichiro Izawa, Nobuhiro Taino, ...Article type: Article
Session ID: IPU'99-50
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe experimentally fabricated a 1/4-inch 360k pixel FT-CCD image sensor for ITU601 format with a single layer poly-Si electrode structure. We have adopted 0.45um as a gap width to keep the balance of the charge handling capability and optical sensitivity. We optimized the membrane structure to improve optical sensitivity. We adopted the sandwich structure that poly-Si gate is put between two silicon-nitride layers which have a high refractive index, to suppress the reflection on the poly-Si surface. 30% of sensitivity improvement was achieved by this structure. FT-CCD image sensor with this new structure is very simple and has high performance.View full abstractDownload PDF (607K) -
Kikue Ishikawa, Hiroshi FukuiArticle type: Article
Session ID: IPU'99-51
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe industrial video camera has various applications. The desirable characteristics and performance of the image sensor for Security/Surveillance use, Medical use, and FA (Factory Automation) use are described. Every application needs high resolution and high sensitivity. But they are the trade-off relationship each other under the characteristic improvement. It is also the important technical theme to develop the wide dynamic range and to improve the red spectral sensitivity. The technical key point is the higher sensitivity development with keeping total performance.View full abstractDownload PDF (654K) -
Article type: Appendix
Pages App1-
Published: July 30, 1999
Released on J-STAGE: June 23, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (74K)
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