Abstract
CaS:Cu, F thin films were deposited on quartz glass substrates in view of development of blue-emitting thin film electroluminescent(EL)devices with high luminance and good color purity. In this experiment, dependence of the crystallinity and PL intensity of the CaS:Cu, F films on the annealing temperature and time was studied. It was shown that the crystallinity and PL intensity were increased by annealing at temperatures above 700℃. They were increased by the annealing up to 10 min, but the increase saturated at annealing times longer than 10 min, From these results, the annealing time of about 10 min sees to be optimum. The thin-film EL device was prepared using Y_2O_3 and ZnS thin films as an insulating and buffer layers, respectively, EL emission with high luminance was not obtained by peeling-off of the films by annealing at higher than 800℃.
