Abstract
Ga_2O_3:Cr phosphor films were prepared by electron beam evaporation using GaN:Cr or Ga_2O_3:Cr as evaporation source and by annealing in air. As-deposited films prepared using GaN:Cr source were consisted of islands with around 1μm diameter, and almost of Ga metal and a little oxygen. On the other hand, the films used Ga_2O_3:Cr source showed amorphous structure with good flatness. The crystalline Ga_2O_3:Cr thin films were formed by annealing both films in air at higher than 900℃. The crystallinity of the films was improved with increasing annaling time. These films showed broad emission band with a peak at around 730nm under excitation with 325nm of He-Cd laser and electron beam at 2keV. This broad emission is thought to be originated from cluster of Cr^<3+> ions.
