Abstract
The magnetic and crystallographic characteristic of Co-Cr thin films deposited on pure Si(100), naturally oxidized SiO_2/Si and slide glass substrates were compared. Ta layer was examined for the underlayer of Co-Cr-Ta perpendicular recording layer. Pure Si(100) substrate was very effective to prepare Co-Cr thin films which had small grain size and their narrow distribution in the initial layer and higher perpendicular anisotropy energy K_u. And the perpendicular coercivityH_<c⊥> of Co-Cr-Ta layer deposited on Ta underlayer was improved in the Co-Cr-Ta layer thickness δ_<Co> below 50nm. Especially, by annealing in 500[℃] higher perpendicular anisotropy field Hk was attained.
