Abstract
A thermal infrared sensor of thermopile due to thermovoltaic effect, is developed using the Si surface bulk micromachining technology which is compatible with the Si-CMOS process. The signal to noise ratio is increased by about 10% , in adaptively designing of thermopile as that the ratio of a p+ polycrystalline Si width to an n+ polycrystalline Si width is around 2 instead of the unity. As a result, the thermopile with unprecedentedly high responsivity and response speed is materialized. Also, the sensor size of more than 2mmD is achievable by the combination of Si surface bulk micromachining technology and making etching hole in infrared detecting area. Furthermore, the sensor can withstand the acceleration of over 20000g.
