Abstract
Ba(Ti,Sn)O_3 (BTS) ferroelectric thin film was newly prepared by metal organic decomposition method for application in our proposed infrared sensor of dielectric bolometer mode. The sensor has merits of l) room temperature operation, 2) low power dissipation, and 3) chopper-less construction. Highly (110) oriented perovskite BTS thin film was successfully crystallized; it demonstrated a high temperature coefficient of dielectric constant of 2.7 %/K ( at 20 ℃). The infrared sensor with BTS thin film exhibits thermal responsivity Rv and specific detectivity D*to be 150 V/W and 3.5 X10^8 cmHz^<1/2>/W, respectively. Therefore, BTS thin film clearly demonstrated its potential as a candidate material for infrared sensor.
