All issues
Predecessor
27.12
Displaying 1-14 of 14 articles from this issue
- |<
- <
- 1
- >
- >|
-
Article type: Cover
Pages Cover1-
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (12K) -
Article type: Index
Pages Toc1-
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (52K) -
[in Japanese]Article type: Article
Session ID: IPU2003-10
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESS -
[in Japanese], [in Japanese]Article type: Article
Session ID: IPU2003-11
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA thermal infrared sensor of thermopile due to thermovoltaic effect, is developed using the Si surface bulk micromachining technology which is compatible with the Si-CMOS process. The signal to noise ratio is increased by about 10% , in adaptively designing of thermopile as that the ratio of a p+ polycrystalline Si width to an n+ polycrystalline Si width is around 2 instead of the unity. As a result, the thermopile with unprecedentedly high responsivity and response speed is materialized. Also, the sensor size of more than 2mmD is achievable by the combination of Si surface bulk micromachining technology and making etching hole in infrared detecting area. Furthermore, the sensor can withstand the acceleration of over 20000g.View full abstractDownload PDF (1437K) -
Shuichi Murakami, Tetsuo Miyamoto, Tetsuo Nomura, Kouji Inoue, Minoru ...Article type: Article
Session ID: IPU2003-12
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSBa(Ti,Sn)O_3 (BTS) ferroelectric thin film was newly prepared by metal organic decomposition method for application in our proposed infrared sensor of dielectric bolometer mode. The sensor has merits of l) room temperature operation, 2) low power dissipation, and 3) chopper-less construction. Highly (110) oriented perovskite BTS thin film was successfully crystallized; it demonstrated a high temperature coefficient of dielectric constant of 2.7 %/K ( at 20 ℃). The infrared sensor with BTS thin film exhibits thermal responsivity Rv and specific detectivity D*to be 150 V/W and 3.5 X10^8 cmHz^<1/2>/W, respectively. Therefore, BTS thin film clearly demonstrated its potential as a candidate material for infrared sensor.View full abstractDownload PDF (770K) -
Shogo UraArticle type: Article
Session ID: IPU2003-13
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (978K) -
[in Japanese]Article type: Article
Session ID: IPU2003-14
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (791K) -
Daisuke TAKAMURO, Hidekuni TAKAO, Kazuaki SAWADA, Makoto ISHIDAArticle type: Article
Session ID: IPU2003-15
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSWe propose a new electron emission type infrared light sensor, which is used a principle of a field emission from a PZT thin plate. The PZT thin plate acts a field emitter and an Aluminum(Al) is an anode electrode. The PZT plate was irradiated by infrared light in a vacuum chamber. The electron emission current was proportional to the incident infrared light energy. Using the principle, we fabricated prototype infrared light image sensor. This imager was constructed with the PZT photocathode, a Micro Channel Plate and a fluorescent substrate. An infrared light was irradiated to the whole PZT thin plate, and we confirmed a fluorescence of the PZT thin plate shape.Infrared Imager.View full abstractDownload PDF (932K) -
[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...Article type: Article
Session ID: IPU2003-16
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESS -
[in Japanese], [in Japanese], [in Japanese]Article type: Article
Session ID: IPU2003-17
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (1030K) -
[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...Article type: Article
Session ID: IPU2003-18
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (820K) -
T. Idehara, S. Mitsudo, L. Ogawa, S. OkajimaArticle type: Article
Session ID: IPU2003-19
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSHigh frequency, frequency tunable, medium power gyrotrons (Gyrotron FU series) are being developed in Fukui University as millimeter to submillimeter wave sources. The gyrotron series has achieved frequency tunability in a wide range from 38 to 889 GHz and medium output power from 0.1 kW to several kW. For the application to many fields, stabilizations of both amplitude and frequency of their outputs have been achieved. In this paper, the advances in recent few years are summarized.View full abstractDownload PDF (1329K) -
Article type: Appendix
Pages App1-
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (76K) -
Article type: Appendix
Pages App2-
Published: February 14, 2003
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (76K)
- |<
- <
- 1
- >
- >|