Abstract
Integrated pressure sensors based on piezoresistance effect are made by various materials and devices, such as diffusion resistor, metal resistor and capacitor. A signal processing circuit is necessary for integrated pressure sensors to achieve high S/N ratio. If pressure sensors can be constructed only MOSFETs, it is not necessary to use other signal processing circuit because it can be operated both stress sensing and signal processing. Thus, we estimate to achieve low-power consumption and high density integration sensors. In this paper, as a fundamental research of active stress sensor which operates both signal processing and sensing, we design and fabricate active stress sensors using SOI-MOSFETs and MEMS technology for integrated intelligent pressure sensors.
