ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
32.45
Session ID : IST2008-52
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An Ultra-low Power Voltage Reference Circuit consisting of Subthreshold MOSFETs
Ken UENOTetsuya HIROSETetsuya ASAIYoshihito AMEMIYA
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Abstract
An ultra-low power CMOS voltage reference circuit has been fabricated in 0.35-μm standard CMOS process. The circuit generates a reference voltage based on threshold voltage of a MOSFET at absolute zero temperature. Theoretical analyses and experimental results showed that the circuit generates a quite stable reference voltage of 745 mV on average. The temperature coefficient and line sensitivity of the circuit were 7 ppm/℃ and 20 ppm/V, respectively. The power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The circuit consists of subthreshold MOSFETs with a low-power dissipation of 0.3μW or less, and a 1.5-V power supply. Because the circuit generates a reference voltage based on threshold voltage of a MOSFET in an LSI chip, it can be used as an on-chip process monitoring circuit and a part of the on-chip process compensation circuit systems.
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© 2008 The Institute of Image Information and Television Engineers
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